Locatia dispozitivuluiInternalFactor de formaM.2Capacitate de stocare250 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate375000 IOPSMaximum Random Write Rate300
Locatia dispozitivuluiInternalFactor de formaM.2Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Maximum Sequential Read Rate3300 MB/sMaximum Sequential Write Rate3000 MB/sProduse returnabile aflate in garantieYesTermen de garantie36 luniCrit
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare480 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellCuloare la exteriorNegruMaximum Sequential Read